60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-.

N-Channel Enhancement Mode Field Effect Transistor

CEB6060

CEB6060L

CEB6060LR

CEB6060N

CEB6020P

CEB603

CEB6030AL

CEB6030L

CEB6030LS2

CEB6031L

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